A deep analysis of conductance in polycrystalline SnO2 thick films has been performed. A model for field-assisted-thermionic barrier crossing is proposed to explain the film conductivity. The model has been applied to two sets of nanostructured thick-films with grains having two well distinct characteristic radii (R=25nm and R=125nm). In the first case the grain radius is shorter than the depletion region width, and in the second case it is longer. The behavior of resistance in the presence of oxygen has been explained through the mechanism of barrier modulation through gas chemisorption.

Two mechanisms of conduction in polycrystalline SnO2

MALAGU', Cesare;CAROTTA, Maria Cristina;GUIDI, Vincenzo;MARTINELLI, Giuliano;
2008

Abstract

A deep analysis of conductance in polycrystalline SnO2 thick films has been performed. A model for field-assisted-thermionic barrier crossing is proposed to explain the film conductivity. The model has been applied to two sets of nanostructured thick-films with grains having two well distinct characteristic radii (R=25nm and R=125nm). In the first case the grain radius is shorter than the depletion region width, and in the second case it is longer. The behavior of resistance in the presence of oxygen has been explained through the mechanism of barrier modulation through gas chemisorption.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1378153
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