The height of the inter-grain energy barrier plays key role in the determination of the conductive properties of semiconducting nanograins. In the limit of very fine nanograins (of the order of 1 nm), quantum effects start being relevant in the determination of physical properties. In this work we propose a model working within a range of grain size that cannot be treated in a purely classical way, i.e., on the border region where quantum confinement starts being effective. We approached the problem in a semi-classical method through the Thomas- Fermi (TF) equation. In particular we calculate the inter-granular energy barrier in metal-oxide chemoresistive materials and compared theoretical expectations to experimental results.
Modelling of the inter-granular energy-barrier height in very-fine nanograins through a semi-classical approach
GUIDI, Vincenzo;CAROTTA, Maria Cristina;MALAGU', Cesare;MARTINELLI, Giuliano
2008
Abstract
The height of the inter-grain energy barrier plays key role in the determination of the conductive properties of semiconducting nanograins. In the limit of very fine nanograins (of the order of 1 nm), quantum effects start being relevant in the determination of physical properties. In this work we propose a model working within a range of grain size that cannot be treated in a purely classical way, i.e., on the border region where quantum confinement starts being effective. We approached the problem in a semi-classical method through the Thomas- Fermi (TF) equation. In particular we calculate the inter-granular energy barrier in metal-oxide chemoresistive materials and compared theoretical expectations to experimental results.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
