A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.
Data di pubblicazione: | 1999 | |
Titolo: | Backgating model including self-heating for low-frequency dispersive effect in III-V FETs | |
Autori: | A., Santarelli; F., Filiocori; Vannini, G.; P., Rinaldi | |
Rivista: | ELECTRONICS LETTERS | |
Keywords: | Dispersive Effects; Electron Devices; Non-linear Model; Microwaves | |
Abstract in inglese: | A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model. | |
Digital Object Identifier (DOI): | 10.1049/el:19981351 | |
Handle: | http://hdl.handle.net/11392/1210709 | |
Appare nelle tipologie: | 03.1 Articolo su rivista |
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