A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.

Backgating model including self-heating for low-frequency dispersive effect in III-V FETs

VANNINI G.
Penultimo
;
1999

Abstract

A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.
A., Santarelli; F., Filiocori; Vannini, G.; P., Rinaldi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1210709
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