A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identification is directly carried out on the bases of S-parameter measurements and electromagnetic analysis of the device layout without requiring cumbersome optimisation techniques. Experimental results confirm that the model is consistent with device scaling
Small-signal distributed FET model consistent with device scaling
VANNINI, Giorgio;
1999
Abstract
A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identification is directly carried out on the bases of S-parameter measurements and electromagnetic analysis of the device layout without requiring cumbersome optimisation techniques. Experimental results confirm that the model is consistent with device scalingFile in questo prodotto:
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