A nonlinear integral approach is adopted for the modeling of Dual-Gate GaAs MESFETs (DGFETs) in the framework of Harmonic-Balance circuit analysis. In particular, the model enables the computation of the large-signal performance of DGFETs directly on the basis of DC characteristics and small-signal bias-dependent admittance parameters without requiring complex procedures for parameter extraction. The validity of the approach is confirmed by accurate physics-based numerical simulations of a DGFET mixer.
Nonlinear integral modeling of Dual-Gate GaAs MESFETs
VANNINI, Giorgio
1994
Abstract
A nonlinear integral approach is adopted for the modeling of Dual-Gate GaAs MESFETs (DGFETs) in the framework of Harmonic-Balance circuit analysis. In particular, the model enables the computation of the large-signal performance of DGFETs directly on the basis of DC characteristics and small-signal bias-dependent admittance parameters without requiring complex procedures for parameter extraction. The validity of the approach is confirmed by accurate physics-based numerical simulations of a DGFET mixer.File in questo prodotto:
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