In this paper it is shown that, even considering a field-dependent Si–SiO2 barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si–SiO2 interfaces, the Fowler–Nordheim (F-N) plot is linear. It is proven that the “equivalent” barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed. © 1991 IEEE
On the Determination of the Si-SiO2 Barrier Height from the Fowler-Nordheim Plot
OLIVO, Piero;
1991
Abstract
In this paper it is shown that, even considering a field-dependent Si–SiO2 barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si–SiO2 interfaces, the Fowler–Nordheim (F-N) plot is linear. It is proven that the “equivalent” barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed. © 1991 IEEEFile in questo prodotto:
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