Electrical breakdown in thin SiO2, films is measured with different techniques at different electric fields. It is shown that oxide reliability is affected by the presence of latent defects requiring a certain time to develop and evolve towards a destructive stage. As such a time is weakly dependent on applied fields, breakdown is not adequately detected by accelerated tests. It is also shown that, due to the localized nature of breakdown, meaningful relationships between measured parameters able to clarify the microscopic nature of oxide failure are not easy to establish. © 1991 IEEE
Influence of Localized Latent Defects on Electrical Breakdown of Thin Insulators
OLIVO, Piero;
1991
Abstract
Electrical breakdown in thin SiO2, films is measured with different techniques at different electric fields. It is shown that oxide reliability is affected by the presence of latent defects requiring a certain time to develop and evolve towards a destructive stage. As such a time is weakly dependent on applied fields, breakdown is not adequately detected by accelerated tests. It is also shown that, due to the localized nature of breakdown, meaningful relationships between measured parameters able to clarify the microscopic nature of oxide failure are not easy to establish. © 1991 IEEEFile in questo prodotto:
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