Transient current measurements have been performed on Pd-gate metal-oxide-semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat-band voltage, and time-dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na + in delaying the transient current response is also illustrated.
Transient Current Response in Pd-SiO2-Si Structures During Hydrogen Absorption and Desorption
OLIVO, Piero
1985
Abstract
Transient current measurements have been performed on Pd-gate metal-oxide-semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat-band voltage, and time-dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na + in delaying the transient current response is also illustrated.File in questo prodotto:
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