In this paper, the set operation of HfO2 based 1T-1R arrays is studied by applying incremental step pulse with verify algorithm. To evaluate the impact of the voltage step increment on the conduction mechanism of filaments, the voltage increments between consecutive pulses are varied between 0.05 and 0.4 V. The extracted leakage values after the set operation were discussed in the framework of the quantum point contact model. In the so called low resistive state, the conductive filaments demonstrate a defined signature of conductance quantization.

Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays

GROSSI, Alessandro
Secondo
;
ZAMBELLI, Cristian;OLIVO, Piero
Penultimo
;
2017

Abstract

In this paper, the set operation of HfO2 based 1T-1R arrays is studied by applying incremental step pulse with verify algorithm. To evaluate the impact of the voltage step increment on the conduction mechanism of filaments, the voltage increments between consecutive pulses are varied between 0.05 and 0.4 V. The extracted leakage values after the set operation were discussed in the framework of the quantum point contact model. In the so called low resistive state, the conductive filaments demonstrate a defined signature of conductance quantization.
2017
Perez, Eduardo; Grossi, Alessandro; Zambelli, Cristian; Olivo, Piero; Wenger, Christian
File in questo prodotto:
File Dimensione Formato  
JEDS2017.pdf

accesso aperto

Descrizione: versione editoriale
Tipologia: Full text (versione editoriale)
Licenza: PUBBLICO - Pubblico con Copyright
Dimensione 898.17 kB
Formato Adobe PDF
898.17 kB Adobe PDF Visualizza/Apri

I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2369295
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 25
  • ???jsp.display-item.citation.isi??? 23
social impact