NAND Flash memories are complex systems that include many heterogeneous blocks that must work together to ensure a high reliability of the information storage. Many efforts in the reliability community are devoted to investigate the reliability-loss of this storage medium from a cell device physics point of view, whereas little importance is given to the other blocks that constitute such a system. In this work we present a reliability threat related to NAND Flash memories that is present on the high voltage circuitry of the memory: the dependence on the power supply. Through the experimental characterization of TLC mid-1X samples and thanks to the SPICE simulations of the high voltage blocks we have investigated the possible sources of this new reliability issue.

Power-supply impact on the reliability of mid-1X TLC NAND flash memories

ZAMBELLI, Cristian;OLIVO, Piero;
2016

Abstract

NAND Flash memories are complex systems that include many heterogeneous blocks that must work together to ensure a high reliability of the information storage. Many efforts in the reliability community are devoted to investigate the reliability-loss of this storage medium from a cell device physics point of view, whereas little importance is given to the other blocks that constitute such a system. In this work we present a reliability threat related to NAND Flash memories that is present on the high voltage circuitry of the memory: the dependence on the power supply. Through the experimental characterization of TLC mid-1X samples and thanks to the SPICE simulations of the high voltage blocks we have investigated the possible sources of this new reliability issue.
2016
978-1-4673-9137-5
978-1-4673-9137-5
NAND Flash, Reliability, Power Supply, BER
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2353893
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