In Brylawski (1973) Brylawski described the covering property for the domination order on non-negative integer partitions by means of two rules. Recently, in Bisi et al. (in press), Cattaneo et al. (2014), Cattaneo et al. (2015) the two classical Brylawski covering rules have been generalized in order to obtain a new lattice structure in the more general signed integer partition context. Moreover, in Cattaneo et al. (2014), Cattaneo et al. (2015), the covering rules of the above signed partition lattice have been interpreted as evolution rules of a discrete dynamical model of a two-dimensional p-n semiconductor junction in which each positive number represents a distribution of holes (positive charges) located in a suitable strip at the left semiconductor of the junction and each negative number a distribution of electrons (negative charges) in a corresponding strip at the right semiconductor of the junction. In this paper we introduce and study a new sub-model of the above dynamical model, which is constructed by using a single vertical evolution rule. This evolution rule describes the natural annihilation of a hole-electron pair at the boundary region of the two semiconductors. We prove several mathematical properties of such new discrete dynamical model and we provide a discussion of its physical properties.

A new discrete dynamical system of signed integer partitions

STUMBO, Fabio
2016

Abstract

In Brylawski (1973) Brylawski described the covering property for the domination order on non-negative integer partitions by means of two rules. Recently, in Bisi et al. (in press), Cattaneo et al. (2014), Cattaneo et al. (2015) the two classical Brylawski covering rules have been generalized in order to obtain a new lattice structure in the more general signed integer partition context. Moreover, in Cattaneo et al. (2014), Cattaneo et al. (2015), the covering rules of the above signed partition lattice have been interpreted as evolution rules of a discrete dynamical model of a two-dimensional p-n semiconductor junction in which each positive number represents a distribution of holes (positive charges) located in a suitable strip at the left semiconductor of the junction and each negative number a distribution of electrons (negative charges) in a corresponding strip at the right semiconductor of the junction. In this paper we introduce and study a new sub-model of the above dynamical model, which is constructed by using a single vertical evolution rule. This evolution rule describes the natural annihilation of a hole-electron pair at the boundary region of the two semiconductors. We prove several mathematical properties of such new discrete dynamical model and we provide a discussion of its physical properties.
2016
Cattaneo, G; Chiaselotti, G; Oliverio, P. A.; Stumbo, Fabio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2353292
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