The impact of 500k write cycles on 1kbits TASMRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions.
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions
GROSSI, Alessandro;ZAMBELLI, Cristian;OLIVO, Piero;
2015
Abstract
The impact of 500k write cycles on 1kbits TASMRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions.File in questo prodotto:
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