In this paper, an empirical characterization technique of charge-trapping effects in GaN FETs based on low-frequency measurements is proposed. It is applied on a 0.25 × 600 μm2GaN HEMT. Experimental results confirm theoretical assumptions reported in literature.
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements
BOSI, Gianni;RAFFO, Antonio;NALLI, Andrea;VADALA', Valeria;VANNINI, Giorgio
2014
Abstract
In this paper, an empirical characterization technique of charge-trapping effects in GaN FETs based on low-frequency measurements is proposed. It is applied on a 0.25 × 600 μm2GaN HEMT. Experimental results confirm theoretical assumptions reported in literature.File in questo prodotto:
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