In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 x 1000 µm2 GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.
Evaluation of FET performance and restrictions by low-frequency measurements
VADALA', Valeria;RAFFO, Antonio;NALLI, Andrea;BOSI, Gianni;VANNINI, Giorgio
2014
Abstract
In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 x 1000 µm2 GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.File in questo prodotto:
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