The distribution of oxygen vacancies in metal oxide nanograins was modeled, considering the possibility of oxygen in- and out-diffusion, in a field-assisted and thermionic emission conduction model. Implications in electrical responses of SnO2 to oxygen concentration and temperature variations will be discussed and compared to an oxygen-free tin semiconducting compound.
Intra-grain oxygen diffusion influence on conductivity of polycrystalline semiconducting compounds.
MALAGU', Cesare;GIBERTI, Alessio;
2014
Abstract
The distribution of oxygen vacancies in metal oxide nanograins was modeled, considering the possibility of oxygen in- and out-diffusion, in a field-assisted and thermionic emission conduction model. Implications in electrical responses of SnO2 to oxygen concentration and temperature variations will be discussed and compared to an oxygen-free tin semiconducting compound.File in questo prodotto:
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