We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to 7x10^10 1-MeV-equivalent neutrons per cm^2. Detector performances have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated fluence of the order of 10^8 1-MeV-equivalent neutrons per cm^2.

Silicon Photo-Multiplier radiation hardness tests with a beam controlled neutron source

CALABRESE, Roberto;CIBINETTO, Gianluigi;
2010

Abstract

We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to 7x10^10 1-MeV-equivalent neutrons per cm^2. Detector performances have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated fluence of the order of 10^8 1-MeV-equivalent neutrons per cm^2.
2010
NIM
M., Angelone; M., Pillon; R., Faccini; D., Pinci; W., Baldini; Calabrese, Roberto; Cibinetto, Gianluigi; A., Cotta Ramusino; R., Malaguti; M., Pozzati
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1408167
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