This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.

Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

RAFFO, Antonio;VADALA', Valeria;VANNINI, Giorgio
2010

Abstract

This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.
2010
Raffo, Antonio; Vadala', Valeria; D., Schreurs; G., Crupi; G., Avolio; A., Caddemi; Vannini, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1394007
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