We suggest the use of a buried oxide layer to increase the efficiency of particle capture into the regime of stable channelling motion. At normal incidence, available separation by implanted oxygen structures can be used to increase the probability of proton capture with energies from 5 MeV to about 1 GeV. The fraction of nonchannelled protons can be decreased down to 2% at energies of several hundred MeV in the case of (1 1 0) Si planes. Rutherford backscattering as well as transmitted energy or angular distribution techniques can be used to observe the increase in channelling efficiency.

Increase of probability of ion capture into channeling regime by a buried oxide layer

GUIDI, Vincenzo;MAZZOLARI, Andrea;
2009

Abstract

We suggest the use of a buried oxide layer to increase the efficiency of particle capture into the regime of stable channelling motion. At normal incidence, available separation by implanted oxygen structures can be used to increase the probability of proton capture with energies from 5 MeV to about 1 GeV. The fraction of nonchannelled protons can be decreased down to 2% at energies of several hundred MeV in the case of (1 1 0) Si planes. Rutherford backscattering as well as transmitted energy or angular distribution techniques can be used to observe the increase in channelling efficiency.
2009
Guidi, Vincenzo; Mazzolari, Andrea; V. V., Tikhomirov
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1377555
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