Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme

This work demonstrates that the erratic erase phenomena present in Flash memories may be drastically reduced using different erasing schemes. In particular, the erratic behavior of a standard box erasing scheme (SBES) and that of the constant charge erasing scheme (CCES) have been measured and compared showing that CCES is more robust against erratic erase. Hole trapping/de-trapping properties related to the erratic phenomena reveal that hole trapping induced oxide degradation is expected to be worst for SBES