We report the characterization of thin films of MoO3 and their implementation on a micromachined silicon-based structure to achieve considerably low power consumption. The sensing layer is capable of detecting NO2 up to a few ppm with considerably short response and recovery times. Investigation of structural features of the films is carried out by X-ray diffraction and electron microscopy.
Thin-film gas sensor implemented on a low-power-comsumption micromachined silicon structure
GUIDI, Vincenzo;FERRONI, Matteo;MARTINELLI, Giuliano;
1998
Abstract
We report the characterization of thin films of MoO3 and their implementation on a micromachined silicon-based structure to achieve considerably low power consumption. The sensing layer is capable of detecting NO2 up to a few ppm with considerably short response and recovery times. Investigation of structural features of the films is carried out by X-ray diffraction and electron microscopy.File in questo prodotto:
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