In this paper the design of a VCO using GaInP/GaAs HBT technology is presented. The VCO is designed to be a part of a PDH point to point radio system. To achieve low phase noise performances GaInP/GaAs HBT technology and push-push topology have been chosen. The MMIC includes predistorters to emphasize the second harmonic, f/sub 0//2 prescalers for PLL locking and buffer amplifiers. A fully monolithic microstrip resonator is coupled with integrated varactors to achieve the specified tuning bandwidth. Phase noise, bandwidth and power measurements will also be presented.

Push-Push X Band GaInP/GaAs VCO With a Fully Monolithic Microstrip Resonator

PIRAZZINI, Massimo;CIGNANI, Rafael;VANNINI, Giorgio;
2004

Abstract

In this paper the design of a VCO using GaInP/GaAs HBT technology is presented. The VCO is designed to be a part of a PDH point to point radio system. To achieve low phase noise performances GaInP/GaAs HBT technology and push-push topology have been chosen. The MMIC includes predistorters to emphasize the second harmonic, f/sub 0//2 prescalers for PLL locking and buffer amplifiers. A fully monolithic microstrip resonator is coupled with integrated varactors to achieve the specified tuning bandwidth. Phase noise, bandwidth and power measurements will also be presented.
2004
9780780383319
III-V semiconductors; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; microstrip resonators; varactors; voltage-controlled oscillators
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1196384
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