The method includes the following steps: formulation of liquid, non-gelled and stable precursors by solvolysis of ZV (IV) compounds; precursor deposition on endosseous implant surface; thermal treatment to achieve film densification, in the presence of oxygen, of a complex formed by the said endosseous implant and precursor, to obtain on the implant surface a thin nanocrystalline zirconium dioxide film.

Method for preparing a fully-anchored Zirconium dioxide film with non-gelled organic doped precursors on endosseous implant.

CARINCI, Francesco;BIGNOZZI, Carlo Alberto;CARAMORI, Stefano
2005

Abstract

The method includes the following steps: formulation of liquid, non-gelled and stable precursors by solvolysis of ZV (IV) compounds; precursor deposition on endosseous implant surface; thermal treatment to achieve film densification, in the presence of oxygen, of a complex formed by the said endosseous implant and precursor, to obtain on the implant surface a thin nanocrystalline zirconium dioxide film.
2005
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1188909
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